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| SI4392DY Vishay Siliconix N-Channel Reduced Qg, Fast Switching WFET(R) PRODUCT SUMMARY VDS (V) 30 rDS(on) () 0.00975 at VGS = 10 V 0.01375 at VGS = 4.5 V ID (A) 12.5 10.0 FEATURES * Extremely Low Qgd WFET Technology for Switching Losses * TrenchFET(R) Power MOSFET * 100 % Rg Tested Available RoHS* COMPLIANT APPLICATIONS * High-Side DC/DC Conversion - Notebook - Server SO-8 S S S G 1 2 3 4 Top View S Ordering Information: SI4392DY-T1 SI4392DY-T1-E3 (Lead (Pb)-free) N-Channel MOSFET 8 7 6 5 D D D D G D ABSOLUTE MAXIMUM RATINGS TA = 25 C, unless otherwise noteda Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 C)a Pulsed Drain Current Continuous Source Current (Diode Single Pulse Avalanche Current Avalanche Energy Maximum Power Dissipationa Operating Junction and Storage Temperature Range Conduction)a L = 0.1 mH TA = 25 C TA = 70 C TA = 25 C TA = 70 C Symbol VDS VGS ID IDM IS IAS EAS PD TJ, Tstg Limits 30 20 12.5 10 50 2.7 30 45 3.0 1.9 - 55 to 150 mJ W C A Unit V THERMAL RESISTANCE RATINGSa Parameter Maximum Junction-to-Ambient Maximum Junction-to-Foot (Drain) Notes: a. Surface Mounted on 1" x 1" FR4 Board, t 10 sec. * Pb containing terminations are not RoHS compliant, exemptions may apply. Symbol RthJA RthJF Typical 33 16 Maximum 42 20 Unit C/W Document Number: 72151 S-61013-Rev. E, 12-Jun-06 www.vishay.com 1 SI4392DY Vishay Siliconix SPECIFICATIONS TJ = 25 C, unless otherwise noted Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Resistancea Forward Transconductancea Diode Forward Voltage Dynamicb Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Source-Drain Reverse Recovery Time Qg Qgs Qgd Rg td(on) tr td(off) tf trr IF = 2.7 A, di/dt = 100 A/s VDD = 15 V, RL = 15 ID 1 A, VGEN = 10 V, Rg = 6 0.5 VDS = 15 V, VGS = 4.5 V, ID = 12.5 A 10 3.5 2.6 1.6 15 5 45 8 30 2.7 25 10 70 15 60 ns 15 nC a Symbol VGS(th) IGSS IDSS ID(on) rDS(on) gfs VSD Test Conditions VDS = VGS, ID = 250 A VDS = 0 V, VGS = 20 V VDS = 30 V, VGS = 0 V VDS = 30 V, VGS = 0 V, TJ = 55 C VDS 5 V, VGS = 10 V VGS = 10 V, ID = 12.5 A VGS = 4.5 V, ID = 10.0 A VDS = 15 V, ID = 12.5 A IS = 2.7 A, VGS = 0 V Min 1.0 Typ Max 3.0 100 1 5 Unit V nA A A 30 0.008 0.011 40 0.73 1.1 0.00975 0.01375 S V Notes: a. Pulse test; pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. TYPICAL CHARACTERISTICS 25 C unless noted 50 VGS = 10 thru 4 V 40 40 I D - Drain Current (A) 50 I D - Drain Current (A) 30 30 20 3V 20 TC = 125 C 10 25 C - 55 C 10 0 0 1 2 3 4 5 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics www.vishay.com 2 Document Number: 72151 S-61013-Rev. E, 12-Jun-06 SI4392DY Vishay Siliconix TYPICAL CHARACTERISTICS 0.030 25 C unless noted 1800 Ciss r DS(on) - On-Resistance () C - Capacitance (pF) 0.024 1500 1200 0.018 900 Coss 600 Crss 0.012 VGS = 4.5 V VGS = 10 V 0.006 300 0.000 0 10 20 30 40 50 0 0 6 12 18 24 30 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current 6 V GS - Gate-to-Source Voltage (V) VDS = 15 V ID = 12.5 A rDS(on) - On-Resistance (Normalized) 1.8 VGS = 10 V ID = 12.5 A Capacitance 5 1.6 4 1.4 3 1.2 2 1.0 1 0.8 0 0 3 6 9 12 15 Qg - Total Gate Charge (nC) 0.6 - 50 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (C) Gate Charge 50 0.040 On-Resistance vs. Junction Temperature I S - Source Current (A) TJ = 150 C 10 r DS(on) - On-Resistance () 0.032 0.024 ID = 12.5 A 1 TJ = 25 C 0.016 0.008 0.1 0.0 0.000 0.2 0.4 0.6 0.8 1.0 1.2 0 2 4 6 8 10 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage Document Number: 72151 S-61013-Rev. E, 12-Jun-06 www.vishay.com 3 SI4392DY Vishay Siliconix TYPICAL CHARACTERISTICS 25 C unless noted 0.6 0.4 24 V GS(th) Variance (V) 0.2 0.0 - 0.2 - 0.4 6 - 0.6 - 0.8 - 50 0 - 25 0 25 50 75 100 125 150 10- 2 10- 1 1 Time (sec) 10 100 600 TJ - Temperature (C) ID = 250 A Power (W) 18 30 12 Threshold Voltage Single Pulse Power 100 Limited by rDS(on) 10 I D - Drain Current (A) 1 ms 1 10 ms 100 ms 1s 0.1 TC = 25 C Single Pulse 10 s dc 0.01 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) Safe Operating Area, Junction-to-Case 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 Notes: 0.1 0.1 0.05 t1 PDM 0.02 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = R thJA = 70 C/W 3. T JM - TA = PDMZthJA(t) 4. Surface Mounted Single Pulse 0.01 10- 4 10- 3 10- 2 10- 1 1 Square Wave Pulse Duration (sec) 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Ambient www.vishay.com 4 Document Number: 72151 S-61013-Rev. E, 12-Jun-06 SI4392DY Vishay Siliconix TYPICAL CHARACTERISTICS 25 C unless noted 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 Square Wave Pulse Duration (sec) 1 10 Normalized Thermal Transient Impedance, Junction-to-Foot Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?72151 Document Number: 72151 S-61013-Rev. E, 12-Jun-06 www.vishay.com 5 Legal Disclaimer Notice Vishay Notice Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Vishay for any damages resulting from such improper use or sale. Document Number: 91000 Revision: 08-Apr-05 www.vishay.com 1 |
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